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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6495 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wideband amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature SEM GE Open base TC=25ae OND IC TOR UC VALUE 150 80 7 10 70 150 -65~200 UNIT V V V A W ae ae Open collector THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 4.37 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N6495 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0 80 V VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=1A 2.0 V VBE Base -emitter on voltage IC=10A ; VCE=3V VCE=150V;VBE(off)=-1.5V TC=150ae VCE=40V; IB=0 2.8 0.1 1.0 0.1 V ICEV Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current hFE DC current gain VEB=7V; IC=0 0.1 mA IC=10A ; VCE=3V fT Transition frequency HAN INC SEM GE IC=1 A ; VCE=10V OND IC 10 TOR UC 60 25 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6495 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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